Le transistor 2N3055 est un transistor de puissance utile à de nombreuses applications : alimentations de puissance, amplis audio, commutation, etc. The few main of these applications are in the field of inverters and power amplifiers. So it provides the reference voltage. Lorsqu'on fait passer 4A dans le 2N3055, il y a au maximum un résiduel de 1.1V entre collecteur et émetteur.
2N3055HV, with a 100 Vceo rating), different case material or type (e.g. Last Updated on January 1, 2020 by Swagatam 4 Comments. Outils, produits et équipements de jardin, Mis à jour: lundi 14 septembre 2015 06:16, Le transistor bipolaire: paire de Sziklai, Stroboscope à tube : étude, tests et mesures, Réalisation d'alimentation à découpage pour ampli, Transistors 2SA 2SB 2SC 2SD : références et choix, Filtre actif passe bas pour caisson de basse, Jeu de lumière 2 x 300w Double twist : réalisation, Jeu de lumière Moonflower à gobo : construction, Ecoconception dans le cycle de vie d'un produit électronique, Détecteur de fumée : principe de fonctionnement.
It was produced exclusively by the Czechoslovakian electronics company Tesla.
Mentions légales
[10] The 2N3054 and 2N3055 were derived from the 2N1486 and 2N1490 after package redesigns by Milt Grimes.
Les transistors Mosfet de puissance, quant à eux, n'ont pas ce phénomène. [2] It is a transistor type of enduring popularity.[3][4][5]. steel, aluminium, or plastic with metal tab), and other variations exist, in addition to the minor variations in ratings (such as a power dissipation of 115 or 117 Watts) between 2N3055-marked devices from various manufacturers since RCA's original. For a more efficient and Hi-Fi amplifier design, I recommend the following mini crescendo, which is perhaps one of the most classic and efficient amplifier circuits using just a pair of 2N3055 transistors. La tension base-émetteur (qui n'est rien d'autre qu'une tension de jonction PN) peut atteindre 1.5V. If these limits are exceeded, device may cease to function with its standard specifications, causing severe damage to the device and also affecting its reliability parameters. C'est une limitation qui existe sur tous les transistors bipolaires de puissance. In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 (described as being for "hifi" purposes) and BDY38 (although the BDY38 has lower voltage ratings than the 2N3055). [1] The maximum voltage and current ratings of this device are the same as the original, but it is not as immune from secondary breakdown; the power handling (safe operating area) is limited at high voltage to a lower current than the original. Although the amplifier above looks too simple to make, the low-tech design forces the 2N3055 to dissipate a lot power through heat.
The 2N3773, with a TO-3 case has slightly lower gain but significantly higher maximum ratings (150 W, 140 Vceo, 16 amps). A calculated resistor must be included in series with the base pinout of the transistor. Voici les caractéristiques électriques de ce transistor : - Tension collecteur émetteur max Vce : 60V On peut pousser cette tension à 70V si on place une résistance entre base et émetteur de 100 Ohms.
Le transistor dissipe 30W dans ce fonctionnement là ! We use cookies to ensure that we give you the best experience on our website. The frequency at which gain begins to drop off may be much lower, see below. Thermal Resistance from Junction−to−Case R0JC = 1.52 C/W. Le transistor 2N3055 est classique pour son brochage, le boitier métallique étant le collecteur. La dissipation maximum de puissance (115W) est restreinte à partir de Vce = 30V. This transistor is a universal power BJT that can be used in almost all higher power based applications where high current and efficient switching of current is expected. Second breakdown pulse boundaries are legitimate for duty cycles upto 10% but must be derated for temperatures as indicated in the following figure: The 2N3055 is a versatile NPN power transistor which can be effectively applied for all medium power (current) delivering circuit. I am also the founder of the website: https://www.homemade-circuits.com/, where I love sharing my innovative circuit ideas and tutorials. 2N3055: Power Transistors: ON Semiconductor: 2N3055: Complementary Silicon Power …
[11] One limitation was that its frequency response was rather low (typically the unity-gain frequency or transition frequency, fT, was 1 MHz).
The 2N3054 is a much lower power version of the 2N3055, rated at 25 W, 55 V and 4 A, but became almost obsolete about the late 1980s when many TO-66 devices were withdrawn from mainstream manufacturers's lists. Nevertheless, a 2N3055 (and many other power transistors originating from this era) cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency range. No Problem, you can solve all your queries here! The few main of these applications are in the field of inverters and power amplifiers. C'est pour cela qu'on ne voit que deux pattes en dessous : la base et l'émetteur. - Courant collecteur continu : 15A - Gain en courant hfe : 20 à 70 (mesuré à un courant collecteur Ic=4A) - Tension Vcesat : 1.1V max à Ic = 4A, Ib = 400mA Lorsqu'on fait passer 4A dans le 2N3055, il y a au maximum un résiduel de 1.1V entre collecteur et émetteur.
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